| PART |
Description |
Maker |
| CY7C1515AV18-200BZXI CY7C1526AV18-278BZXC CY7C1526 |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
8M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1513JV18-250BZXC |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1426AV18 |
36-Mbit QDR-II SRAM 4-Word Burst Architecture(4字Burst结构,36-Mbit QDR-II SRAM)
|
Cypress Semiconductor Corp.
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| CY7C1425AV18 CY7C1414AV18-167BZI CY7C1414AV18-167B |
36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mb QDR-II SRAM2-Word Burst结构36-Mb QDR-II SRAM2-Word Burst结构 36 - MB的QDR - II型的SRAM2字突发结构）6 - MB的QDR - II型的SRAM2字突发结构）
|
Cypress Semiconductor Corp.
|
| Y5-12-12 Y5-12-15 Y5-12-5 Y5-12S15 Y5-12S5 |
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture
256K (32K x 8) Static RAM
16K/32K/64K/128K x 9 Low-Voltage Deep Sync™ FIFOs 模拟IC
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture
USB LOW SPEED, 3 ENDPOINT, ENCORE II, 16-SOIC
|
东电?中国)投资有限公司
|
| CY7C1412V18-200BZCES CY7C1414V18-200BZCES CY7C1410 |
36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mbit QDR-II™ SRAM 2-Word Burst Architecture
36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
256K (32K x 8) Static RAM
256 Kb (256K x 1) Static RAM
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1263V18-300BZI |
36-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1565V18-300BZI |
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
